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Nexperia USA Inc. PHN210T,118
MOSFET 2N-CH 30V 8SOIC
- Manufacturer
- Nexperia USA Inc.
- Datasheet
- Price
- 0
- Stock
- 40
Product Details
- Series
- -
- Gate Charge (Qg) (Max) @ Vgs
- -
- FET Type
- 3 N-Channel, Common Gate
- Drain to Source Voltage (Vdss)
- 600V
- Packaging
- Tube
- Input Capacitance (Ciss) (Max) @ Vds
- -
- FET Feature
- Standard
- Current - Continuous Drain (Id) @ 25°C
- 80mA
- Part Status
- Active
- Power - Max
- 1.3W
- Mounting Type
- Through Hole
- Package / Case
- 8-DIP (0.300", 7.62mm)
- Vgs(th) (Max) @ Id
- 1.2V @ 250µA
- Operating Temperature
- -20°C ~ 125°C (TJ)
- Rds On (Max) @ Id, Vgs
- 190Ohm @ 10mA, 10V
- Supplier Device Package
- 8-PDIP