Nexperia USA Inc. BSH105,215

Product Details

Rds On (Max) @ Id, Vgs

165mOhm @ 2.3A, 10V

Series

HEXFET®

Power Dissipation (Max)

1.25W (Ta)

FET Type

P-Channel

Supplier Device Package

Micro3™/SOT-23

Packaging

Digi-Reel®

Gate Charge (Qg) (Max) @ Vgs

2nC @ 4.5V

Vgs (Max)

±20V

Drain to Source Voltage (Vdss)

30V

Technology

MOSFET (Metal Oxide)

Input Capacitance (Ciss) (Max) @ Vds

160pF @ 25V

FET Feature

-

Current - Continuous Drain (Id) @ 25°C

2.3A (Ta)

Part Status

Active

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Mounting Type

Surface Mount

Package / Case

TO-236-3, SC-59, SOT-23-3

Vgs(th) (Max) @ Id

2.4V @ 10µA

Operating Temperature

-55°C ~ 150°C (TJ)