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Microsemi Corporation JANSR2N3440
RH POWER BJT
- Manufacturer
- Microsemi Corporation
- Datasheet
- Price
- 197.44
- Stock
- 0
Product Details
- Part Status
- Active
- Voltage - Collector Emitter Breakdown (Max)
- 350V
- Power - Max
- 800mW
- Mounting Type
- Surface Mount
- Package / Case
- 3-SMD, No Lead
- Transistor Type
- NPN
- Operating Temperature
- -65°C ~ 200°C (TJ)
- Frequency - Transition
- -
- Supplier Device Package
- U4
- Vce Saturation (Max) @ Ib, Ic
- 500mV @ 4mA, 50mA
- Current - Collector (Ic) (Max)
- 1A
- Series
- -
- Current - Collector Cutoff (Max)
- 2µA
- Packaging
- Tray
- DC Current Gain (hFE) (Min) @ Ic, Vce
- 40 @ 20mA, 10V