IXYS VMO60-05F

Product Details

Vgs (Max)

+20V, -5V

Drain to Source Voltage (Vdss)

1200V

Technology

SiC (Silicon Carbide Junction Transistor)

Input Capacitance (Ciss) (Max) @ Vds

1900pF @ 1000V

FET Feature

-

Current - Continuous Drain (Id) @ 25°C

47A (Tc)

Part Status

Active

Drive Voltage (Max Rds On, Min Rds On)

20V

Mounting Type

Chassis Mount

Package / Case

SOT-227-4, miniBLOC

Vgs(th) (Max) @ Id

2.2V @ 2mA

Operating Temperature

-40°C ~ 150°C (TJ)

Rds On (Max) @ Id, Vgs

50mOhm @ 40A, 20V

Series

-

Power Dissipation (Max)

-

FET Type

N-Channel

Supplier Device Package

SOT-227B

Packaging

Tube

Gate Charge (Qg) (Max) @ Vgs

100nC @ 20V