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IXYS MMIX1T600N04T2

MOSFET N-CH 40V 600A SMPD

Manufacturer
IXYS
Datasheet
Price
24.18
Stock
0

Product Details

Packaging
Tube
Gate Charge (Qg) (Max) @ Vgs
235nC @ 10V
Vgs (Max)
±30V
Drain to Source Voltage (Vdss)
1100V
Technology
MOSFET (Metal Oxide)
Input Capacitance (Ciss) (Max) @ Vds
13600pF @ 25V
FET Feature
-
Current - Continuous Drain (Id) @ 25°C
30A (Tc)
Part Status
Active
Drive Voltage (Max Rds On, Min Rds On)
10V
Mounting Type
Through Hole
Package / Case
TO-264-3, TO-264AA
Vgs(th) (Max) @ Id
6.5V @ 1mA
Operating Temperature
-55°C ~ 150°C (TJ)
Rds On (Max) @ Id, Vgs
360mOhm @ 15A, 10V
Series
HiPerFET™, PolarP2™
Power Dissipation (Max)
960W (Tc)
FET Type
N-Channel
Supplier Device Package
TO-264AA (IXFK)