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IXYS IXTX22N100L
MOSFET N-CH 1000V 22A PLUS247
- Manufacturer
- IXYS
- Datasheet
- Price
- 31.85
- Stock
- 390
Product Details
- Technology
- GaNFET (Gallium Nitride)
- Input Capacitance (Ciss) (Max) @ Vds
- 2197pF @ 400V
- FET Feature
- -
- Current - Continuous Drain (Id) @ 25°C
- 50A (Tc)
- Part Status
- Last Time Buy
- Drive Voltage (Max Rds On, Min Rds On)
- 10V
- Mounting Type
- Through Hole
- Package / Case
- TO-247-3
- Vgs(th) (Max) @ Id
- 2.65V @ 700µA
- Operating Temperature
- -55°C ~ 150°C (TJ)
- Rds On (Max) @ Id, Vgs
- 41mOhm @ 32A, 8V
- Series
- -
- Power Dissipation (Max)
- 178W (Tc)
- FET Type
- N-Channel
- Supplier Device Package
- TO-247-3
- Packaging
- Tube
- Gate Charge (Qg) (Max) @ Vgs
- 42nC @ 8V
- Vgs (Max)
- ±18V
- Drain to Source Voltage (Vdss)
- 650V