IXYS IXTT60N20L2

Product Details

FET Type

N-Channel

Supplier Device Package

ISOPLUS247™

Packaging

Tube

Gate Charge (Qg) (Max) @ Vgs

64nC @ 10V

Vgs (Max)

±30V

Drain to Source Voltage (Vdss)

1000V

Technology

MOSFET (Metal Oxide)

Input Capacitance (Ciss) (Max) @ Vds

3250pF @ 25V

FET Feature

-

Current - Continuous Drain (Id) @ 25°C

10A (Tc)

Part Status

Active

Drive Voltage (Max Rds On, Min Rds On)

10V

Mounting Type

Through Hole

Package / Case

TO-247-3

Vgs(th) (Max) @ Id

6.5V @ 4mA

Operating Temperature

-55°C ~ 150°C (TJ)

Rds On (Max) @ Id, Vgs

1.2Ohm @ 7.5A, 10V

Series

HiPerFET™

Power Dissipation (Max)

400W (Tc)