IXYS IXTT30N50L

Product Details

Technology

SiCFET (Silicon Carbide)

Input Capacitance (Ciss) (Max) @ Vds

660pF @ 600V

FET Feature

-

Current - Continuous Drain (Id) @ 25°C

35A (Tc)

Part Status

Active

Drive Voltage (Max Rds On, Min Rds On)

15V

Mounting Type

Surface Mount

Package / Case

TO-263-8, D²Pak (7 Leads + Tab), TO-263CA

Vgs(th) (Max) @ Id

2.1V @ 5mA

Operating Temperature

-55°C ~ 150°C (TJ)

Rds On (Max) @ Id, Vgs

78mOhm @ 20A, 15V

Series

C3M™

Power Dissipation (Max)

113W (Tc)

FET Type

N-Channel

Supplier Device Package

D2PAK-7

Packaging

Tape & Reel (TR)

Gate Charge (Qg) (Max) @ Vgs

30nC @ 15V

Vgs (Max)

+19V, -8V

Drain to Source Voltage (Vdss)

900V