IXYS IXTR102N65X2

Product Details

Rds On (Max) @ Id, Vgs

90mOhm @ 20A, 15V

Series

C3M™

Power Dissipation (Max)

113.6W (Tc)

FET Type

N-Channel

Supplier Device Package

TO-263-7

Packaging

Tape & Reel (TR)

Gate Charge (Qg) (Max) @ Vgs

51nC @ 15V

Vgs (Max)

+15V, -4V

Drain to Source Voltage (Vdss)

1200V

Technology

SiC (Silicon Carbide Junction Transistor)

Input Capacitance (Ciss) (Max) @ Vds

1350pF @ 1000V

FET Feature

-

Current - Continuous Drain (Id) @ 25°C

30A (Tc)

Part Status

Active

Drive Voltage (Max Rds On, Min Rds On)

15V

Mounting Type

Surface Mount

Package / Case

TO-263-8, D²Pak (7 Leads + Tab), TO-263CA

Vgs(th) (Max) @ Id

4V @ 5mA

Operating Temperature

-55°C ~ 150°C (TJ)