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IXYS IXTQ52P10P
MOSFET P-CH 100V 52A TO-3P
- Manufacturer
- IXYS
- Datasheet
- Price
- 5.38
- Stock
- 1956
Product Details
- Technology
- SiCFET (Silicon Carbide)
- Input Capacitance (Ciss) (Max) @ Vds
- 259pF @ 1000V
- FET Feature
- -
- Current - Continuous Drain (Id) @ 25°C
- 10A (Tc)
- Part Status
- Active
- Drive Voltage (Max Rds On, Min Rds On)
- 20V
- Mounting Type
- Through Hole
- Package / Case
- TO-247-3
- Vgs(th) (Max) @ Id
- 2.8V @ 1.25mA (Typ)
- Operating Temperature
- -55°C ~ 150°C (TJ)
- Rds On (Max) @ Id, Vgs
- 370mOhm @ 6A, 20V
- Series
- Z-FET™
- Power Dissipation (Max)
- 62.5W (Tc)
- FET Type
- N-Channel
- Supplier Device Package
- TO-247-3
- Packaging
- Tube
- Gate Charge (Qg) (Max) @ Vgs
- 20.4nC @ 20V
- Vgs (Max)
- +25V, -10V
- Drain to Source Voltage (Vdss)
- 1200V