Images are for reference only. See Product Specifications for product details

IXYS IXTQ52P10P

MOSFET P-CH 100V 52A TO-3P

Manufacturer
IXYS
Datasheet
Price
5.38
Stock
1956

Product Details

Technology
SiCFET (Silicon Carbide)
Input Capacitance (Ciss) (Max) @ Vds
259pF @ 1000V
FET Feature
-
Current - Continuous Drain (Id) @ 25°C
10A (Tc)
Part Status
Active
Drive Voltage (Max Rds On, Min Rds On)
20V
Mounting Type
Through Hole
Package / Case
TO-247-3
Vgs(th) (Max) @ Id
2.8V @ 1.25mA (Typ)
Operating Temperature
-55°C ~ 150°C (TJ)
Rds On (Max) @ Id, Vgs
370mOhm @ 6A, 20V
Series
Z-FET™
Power Dissipation (Max)
62.5W (Tc)
FET Type
N-Channel
Supplier Device Package
TO-247-3
Packaging
Tube
Gate Charge (Qg) (Max) @ Vgs
20.4nC @ 20V
Vgs (Max)
+25V, -10V
Drain to Source Voltage (Vdss)
1200V