IXYS IXTQ460P2

Product Details

Vgs (Max)

±25V

Gate Charge (Qg) (Max) @ Vgs

33.4nC @ 10V

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

600V

FET Feature

-

Input Capacitance (Ciss) (Max) @ Vds

1515pF @ 100V

Part Status

Active

Current - Continuous Drain (Id) @ 25°C

25A (Tc)

Mounting Type

Through Hole

Drive Voltage (Max Rds On, Min Rds On)

10V

Package / Case

TO-220-3

Base Part Number

STP33N

Vgs(th) (Max) @ Id

4.75V @ 250µA

Operating Temperature

-55°C ~ 150°C (TJ)

Rds On (Max) @ Id, Vgs

125mOhm @ 12.5A, 10V

Series

MDmesh™ M6

Power Dissipation (Max)

190W (Tc)

FET Type

N-Channel

Supplier Device Package

TO-220