IXYS IXTQ36N50P

Product Details

Base Part Number

STW8N

Vgs(th) (Max) @ Id

5V @ 100µA

Operating Temperature

-55°C ~ 150°C (TJ)

Series

MDmesh™ K5

Rds On (Max) @ Id, Vgs

2Ohm @ 2.5A, 10V

FET Type

N-Channel

Power Dissipation (Max)

130W (Tc)

Packaging

Tube

Supplier Device Package

TO-247

Vgs (Max)

-

Gate Charge (Qg) (Max) @ Vgs

13.7nC @ 10V

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

1200V

FET Feature

-

Input Capacitance (Ciss) (Max) @ Vds

505pF @ 100V

Part Status

Active

Current - Continuous Drain (Id) @ 25°C

6A (Tc)

Mounting Type

Through Hole

Drive Voltage (Max Rds On, Min Rds On)

10V

Package / Case

TO-247-3