IXYS IXTQ26N50P

Product Details

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

600V

FET Feature

-

Input Capacitance (Ciss) (Max) @ Vds

2785pF @ 50V

Part Status

Active

Current - Continuous Drain (Id) @ 25°C

29A (Tc)

Mounting Type

Surface Mount

Drive Voltage (Max Rds On, Min Rds On)

10V

Package / Case

TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

Base Part Number

STB34N

Vgs(th) (Max) @ Id

5V @ 250µA

Operating Temperature

150°C (TJ)

Series

FDmesh™ II

Rds On (Max) @ Id, Vgs

110mOhm @ 14.5A, 10V

FET Type

N-Channel

Power Dissipation (Max)

190W (Tc)

Packaging

Digi-Reel®

Supplier Device Package

D2PAK

Vgs (Max)

±25V

Gate Charge (Qg) (Max) @ Vgs

80.4nC @ 10V