IXYS IXTQ22N50P

Product Details

Vgs(th) (Max) @ Id

4V @ 250µA

Operating Temperature

-55°C ~ 175°C (TJ)

Rds On (Max) @ Id, Vgs

3.1mOhm @ 100A, 10V

Series

HiperFET™, TrenchT3™

Power Dissipation (Max)

480W (Tc)

FET Type

N-Channel

Supplier Device Package

TO-263AA

Packaging

Tube

Gate Charge (Qg) (Max) @ Vgs

200nC @ 10V

Vgs (Max)

±20V

Drain to Source Voltage (Vdss)

60V

Technology

MOSFET (Metal Oxide)

Input Capacitance (Ciss) (Max) @ Vds

12600pF @ 25V

FET Feature

-

Current - Continuous Drain (Id) @ 25°C

270A (Tc)

Part Status

Active

Drive Voltage (Max Rds On, Min Rds On)

10V

Mounting Type

Surface Mount

Package / Case

TO-263-3, D²Pak (2 Leads + Tab), TO-263AB