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IXYS IXTP8N65X2M
MOSFET N-CH 650V 4A X2 TO-220
- Manufacturer
- IXYS
- Datasheet
- Price
- 1.85
- Stock
- 0
Product Details
- Mounting Type
- Through Hole
- Package / Case
- TO-220-3
- Vgs(th) (Max) @ Id
- 5V @ 1mA
- Operating Temperature
- -55°C ~ 150°C (TJ)
- Rds On (Max) @ Id, Vgs
- 1.15Ohm @ 500mA, 10V
- Series
- HiPerFET™
- Power Dissipation (Max)
- 180W (Tc)
- FET Type
- N-Channel
- Supplier Device Package
- TO-220AB
- Packaging
- Tube
- Gate Charge (Qg) (Max) @ Vgs
- 13.3nC @ 10V
- Vgs (Max)
- ±30V
- Drain to Source Voltage (Vdss)
- 600V
- Technology
- MOSFET (Metal Oxide)
- Input Capacitance (Ciss) (Max) @ Vds
- 705pF @ 25V
- FET Feature
- -
- Current - Continuous Drain (Id) @ 25°C
- 7A (Tc)
- Part Status
- Active
- Drive Voltage (Max Rds On, Min Rds On)
- 10V