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IXYS IXTP4N70X2M

MOSFET N-CH

Manufacturer
IXYS
Datasheet
Price
2
Stock
0

Product Details

Part Status
Not For New Designs
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Mounting Type
Through Hole
Package / Case
TO-220-3
Vgs(th) (Max) @ Id
2V @ 2mA
Operating Temperature
-55°C ~ 175°C (TJ)
Rds On (Max) @ Id, Vgs
16mOhm @ 50A, 10V
Series
SIPMOS®
Power Dissipation (Max)
250W (Tc)
FET Type
N-Channel
Supplier Device Package
PG-TO220-3-1
Packaging
Tube
Gate Charge (Qg) (Max) @ Vgs
240nC @ 10V
Vgs (Max)
±20V
Drain to Source Voltage (Vdss)
100V
Technology
MOSFET (Metal Oxide)
Input Capacitance (Ciss) (Max) @ Vds
4540pF @ 25V
FET Feature
-
Current - Continuous Drain (Id) @ 25°C
70A (Tc)