IXYS IXTP140P05T

Product Details

Vgs (Max)

+25V, -10V

Drain to Source Voltage (Vdss)

1700V

Technology

SiCFET (Silicon Carbide)

Input Capacitance (Ciss) (Max) @ Vds

200pF @ 1000V

FET Feature

-

Current - Continuous Drain (Id) @ 25°C

5.3A (Tc)

Part Status

Active

Drive Voltage (Max Rds On, Min Rds On)

20V

Mounting Type

Surface Mount

Package / Case

TO-263-7 (Straight Leads)

Vgs(th) (Max) @ Id

3.1V @ 500µA (Typ)

Operating Temperature

-55°C ~ 150°C (TJ)

Rds On (Max) @ Id, Vgs

1.4Ohm @ 2A, 20V

Series

C2M™

Power Dissipation (Max)

78W (Tc)

FET Type

N-Channel

Supplier Device Package

D2PAK (7-Lead)

Packaging

Bulk

Gate Charge (Qg) (Max) @ Vgs

13nC @ 20V