IXYS IXTN600N04T2

Product Details

FET Feature

-

Current - Continuous Drain (Id) @ 25°C

60A (Tc)

Part Status

Active

Drive Voltage (Max Rds On, Min Rds On)

10V

Mounting Type

Through Hole

Package / Case

TO-264-3, TO-264AA

Vgs(th) (Max) @ Id

4.5V @ 250µA

Operating Temperature

-55°C ~ 150°C (TJ)

Rds On (Max) @ Id, Vgs

100mOhm @ 30A, 10V

Series

Linear L2™

Power Dissipation (Max)

960W (Tc)

FET Type

N-Channel

Supplier Device Package

TO-264 (IXTK)

Packaging

Tube

Gate Charge (Qg) (Max) @ Vgs

610nC @ 10V

Vgs (Max)

±30V

Drain to Source Voltage (Vdss)

500V

Technology

MOSFET (Metal Oxide)

Input Capacitance (Ciss) (Max) @ Vds

24000pF @ 25V