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IXYS IXTN200N10L2

MOSFET N-CH 100V 178A SOT-227

Manufacturer
IXYS
Datasheet
Price
36.09
Stock
397

Product Details

Operating Temperature
175°C (TJ)
Rds On (Max) @ Id, Vgs
28.6mOhm @ 36A, 18V
Series
-
Power Dissipation (Max)
339W (Tc)
FET Type
N-Channel
Supplier Device Package
TO-247N
Packaging
Tube
Gate Charge (Qg) (Max) @ Vgs
133nC @ 18V
Vgs (Max)
+22V, -4V
Drain to Source Voltage (Vdss)
650V
Technology
SiCFET (Silicon Carbide)
Input Capacitance (Ciss) (Max) @ Vds
2208pF @ 500V
FET Feature
-
Current - Continuous Drain (Id) @ 25°C
93A (Tc)
Part Status
Active
Drive Voltage (Max Rds On, Min Rds On)
18V
Mounting Type
Through Hole
Package / Case
TO-247-3
Vgs(th) (Max) @ Id
5.6V @ 18.2mA