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IXYS IXTN200N10L2
MOSFET N-CH 100V 178A SOT-227
- Manufacturer
- IXYS
- Datasheet
- Price
- 36.09
- Stock
- 397
Product Details
- Operating Temperature
- 175°C (TJ)
- Rds On (Max) @ Id, Vgs
- 28.6mOhm @ 36A, 18V
- Series
- -
- Power Dissipation (Max)
- 339W (Tc)
- FET Type
- N-Channel
- Supplier Device Package
- TO-247N
- Packaging
- Tube
- Gate Charge (Qg) (Max) @ Vgs
- 133nC @ 18V
- Vgs (Max)
- +22V, -4V
- Drain to Source Voltage (Vdss)
- 650V
- Technology
- SiCFET (Silicon Carbide)
- Input Capacitance (Ciss) (Max) @ Vds
- 2208pF @ 500V
- FET Feature
- -
- Current - Continuous Drain (Id) @ 25°C
- 93A (Tc)
- Part Status
- Active
- Drive Voltage (Max Rds On, Min Rds On)
- 18V
- Mounting Type
- Through Hole
- Package / Case
- TO-247-3
- Vgs(th) (Max) @ Id
- 5.6V @ 18.2mA