IXYS IXTN17N120L

Product Details

Operating Temperature

-55°C ~ 150°C (TJ)

Power Dissipation (Max)

890W (Tc)

Series

-

Supplier Device Package

TO-268

FET Type

N-Channel

Gate Charge (Qg) (Max) @ Vgs

106nC @ 10V

Packaging

Tube

Drain to Source Voltage (Vdss)

1500V

Vgs (Max)

±30V

Input Capacitance (Ciss) (Max) @ Vds

3720pF @ 25V

Technology

MOSFET (Metal Oxide)

Current - Continuous Drain (Id) @ 25°C

12A (Tc)

FET Feature

-

Drive Voltage (Max Rds On, Min Rds On)

10V

Part Status

Active

Mounting Type

Surface Mount

Package / Case

TO-268-3, D³Pak (2 Leads + Tab), TO-268AA

Vgs(th) (Max) @ Id

4.5V @ 250µA