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IXYS IXTK170P10P
MOSFET P-CH 100V 170A TO-264
- Manufacturer
- IXYS
- Datasheet
- Price
- 14.91
- Stock
- 0
Product Details
- Packaging
- Tube
- Gate Charge (Qg) (Max) @ Vgs
- 95nC @ 20V
- Vgs (Max)
- +22V, -6V
- Drain to Source Voltage (Vdss)
- 1200V
- Technology
- SiCFET (Silicon Carbide)
- Input Capacitance (Ciss) (Max) @ Vds
- 1825pF @ 800V
- FET Feature
- -
- Current - Continuous Drain (Id) @ 25°C
- 39A (Tc)
- Part Status
- Active
- Drive Voltage (Max Rds On, Min Rds On)
- 20V
- Mounting Type
- Through Hole
- Package / Case
- TO-247-3
- Vgs(th) (Max) @ Id
- 4V @ 10mA
- Operating Temperature
- -55°C ~ 150°C
- Rds On (Max) @ Id, Vgs
- 100mOhm @ 20A, 20V
- Series
- -
- Power Dissipation (Max)
- 179W (Tc)
- FET Type
- N-Channel
- Supplier Device Package
- TO-247-3