IXYS IXTK170N10P

Product Details

Vgs (Max)

±20V

Drain to Source Voltage (Vdss)

650V

Technology

MOSFET (Metal Oxide)

Input Capacitance (Ciss) (Max) @ Vds

4340pF @ 400V

FET Feature

-

Current - Continuous Drain (Id) @ 25°C

18A (Tc)

Part Status

Active

Drive Voltage (Max Rds On, Min Rds On)

10V

Mounting Type

Through Hole

Package / Case

TO-220-3 Full Pack

Vgs(th) (Max) @ Id

4V @ 1.25mA

Operating Temperature

-55°C ~ 150°C (TJ)

Rds On (Max) @ Id, Vgs

45mOhm @ 24.9A, 10V

Series

CoolMOS™ C7

Power Dissipation (Max)

35W (Tc)

FET Type

N-Channel

Supplier Device Package

PG-TO220-FP

Packaging

Tube

Gate Charge (Qg) (Max) @ Vgs

93nC @ 10V