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IXYS IXTK120N65X2
MOSFET N-CH 650V 120A TO-264
- Manufacturer
- IXYS
- Datasheet
- Price
- 16.97
- Stock
- 132
Product Details
- Series
- MDmesh™ V
- Rds On (Max) @ Id, Vgs
- 45mOhm @ 29A, 10V
- FET Type
- N-Channel
- Power Dissipation (Max)
- 330W (Tc)
- Packaging
- Tube
- Supplier Device Package
- TO-247-4L
- Vgs (Max)
- ±25V
- Gate Charge (Qg) (Max) @ Vgs
- 143nC @ 10V
- Technology
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)
- 650V
- FET Feature
- -
- Input Capacitance (Ciss) (Max) @ Vds
- 6420pF @ 100V
- Part Status
- Active
- Current - Continuous Drain (Id) @ 25°C
- 58A (Tc)
- Mounting Type
- Through Hole
- Drive Voltage (Max Rds On, Min Rds On)
- 10V
- Package / Case
- TO-247-4
- Base Part Number
- STW69N
- Vgs(th) (Max) @ Id
- 5V @ 250µA
- Operating Temperature
- 150°C (TJ)