IXYS IXTH68P20T

Product Details

Packaging

Tube

Gate Charge (Qg) (Max) @ Vgs

14nC @ 8V

Vgs (Max)

±18V

Drain to Source Voltage (Vdss)

650V

Technology

GaNFET (Gallium Nitride)

Input Capacitance (Ciss) (Max) @ Vds

760pF @ 400V

FET Feature

-

Current - Continuous Drain (Id) @ 25°C

20A (Tc)

Part Status

Obsolete

Drive Voltage (Max Rds On, Min Rds On)

10V

Mounting Type

Surface Mount

Package / Case

3-PowerDFN

Vgs(th) (Max) @ Id

2.6V @ 300µA

Operating Temperature

-55°C ~ 150°C (TJ)

Rds On (Max) @ Id, Vgs

130mOhm @ 13A, 8V

Series

-

Power Dissipation (Max)

96W (Tc)

FET Type

N-Channel

Supplier Device Package

3-PQFN (8x8)