IXYS IXTH500N04T2

Product Details

Series

GigaMOS™

Power Dissipation (Max)

960W (Tc)

FET Type

N-Channel

Supplier Device Package

TO-264AA (IXFK)

Packaging

Tube

Gate Charge (Qg) (Max) @ Vgs

265nC @ 10V

Vgs (Max)

±20V

Drain to Source Voltage (Vdss)

300V

Technology

MOSFET (Metal Oxide)

Input Capacitance (Ciss) (Max) @ Vds

20000pF @ 25V

FET Feature

-

Current - Continuous Drain (Id) @ 25°C

120A (Tc)

Part Status

Active

Drive Voltage (Max Rds On, Min Rds On)

10V

Mounting Type

Through Hole

Package / Case

TO-264-3, TO-264AA

Vgs(th) (Max) @ Id

5V @ 4mA

Operating Temperature

-55°C ~ 150°C (TJ)

Rds On (Max) @ Id, Vgs

24mOhm @ 60A, 10V