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IXYS IXTH10P50P
MOSFET P-CH 500V 10A TO-247
- Manufacturer
- IXYS
- Datasheet
- Price
- 6.04
- Stock
- 85
Product Details
- FET Type
- N-Channel
- Gate Charge (Qg) (Max) @ Vgs
- 15nC @ 20V
- Vgs (Max)
- +22V, -6V
- Drain to Source Voltage (Vdss)
- 1700V
- Technology
- SiCFET (Silicon Carbide)
- Input Capacitance (Ciss) (Max) @ Vds
- 200pF @ 1000V
- FET Feature
- -
- Current - Continuous Drain (Id) @ 25°C
- 5A (Tc)
- Part Status
- Active
- Drive Voltage (Max Rds On, Min Rds On)
- 15V, 20V
- Mounting Type
- Through Hole
- Package / Case
- TO-247-3
- Vgs(th) (Max) @ Id
- 4V @ 1mA
- Operating Temperature
- -55°C ~ 150°C (TJ)
- Rds On (Max) @ Id, Vgs
- 1Ohm @ 2A, 20V
- Power Dissipation (Max)
- 54W (Tc)
- Series
- -
- Supplier Device Package
- TO-247-3L