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IXYS IXTA4N65X2
MOSFET N-CH 650V 4A X2 TO-263
- Manufacturer
- IXYS
- Datasheet
- Price
- 1.65
- Stock
- 0
Product Details
- Operating Temperature
- -55°C ~ 175°C (TJ)
- Rds On (Max) @ Id, Vgs
- 0.7mOhm @ 50A, 10V
- Series
- Automotive, AEC-Q101
- Power Dissipation (Max)
- 3.9W (Ta), 200W (Tc)
- FET Type
- N-Channel
- Supplier Device Package
- 5-DFN (5x6) (8-SOFL)
- Packaging
- Tape & Reel (TR)
- Gate Charge (Qg) (Max) @ Vgs
- 128nC @ 10V
- Vgs (Max)
- ±20V
- Drain to Source Voltage (Vdss)
- 40V
- Technology
- MOSFET (Metal Oxide)
- Input Capacitance (Ciss) (Max) @ Vds
- 8400pF @ 25V
- FET Feature
- -
- Current - Continuous Drain (Id) @ 25°C
- 53A (Ta), 378A (Tc)
- Part Status
- Active
- Drive Voltage (Max Rds On, Min Rds On)
- 10V
- Mounting Type
- Surface Mount
- Package / Case
- 8-PowerTDFN, 5 Leads
- Vgs(th) (Max) @ Id
- 4V @ 250µA