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IXYS IXTA4N150HV
MOSFET N-CH 1.5KV 4A TO263
- Manufacturer
- IXYS
- Datasheet
- Price
- 19.74
- Stock
- 104
Product Details
- Vgs (Max)
- ±18V
- Drain to Source Voltage (Vdss)
- 650V
- Technology
- GaNFET (Gallium Nitride)
- Input Capacitance (Ciss) (Max) @ Vds
- 2200pF @ 400V
- FET Feature
- -
- Current - Continuous Drain (Id) @ 25°C
- 36A (Tc)
- Part Status
- Last Time Buy
- Drive Voltage (Max Rds On, Min Rds On)
- 10V
- Mounting Type
- Through Hole
- Package / Case
- TO-247-3
- Vgs(th) (Max) @ Id
- 2.6V @ 700µA
- Operating Temperature
- -55°C ~ 175°C (TJ)
- Rds On (Max) @ Id, Vgs
- 60mOhm @ 22A, 8V
- Series
- -
- Power Dissipation (Max)
- 125W (Tc)
- FET Type
- N-Channel
- Supplier Device Package
- TO-247-3
- Packaging
- Tube
- Gate Charge (Qg) (Max) @ Vgs
- 42nC @ 8V