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IXYS IXTA3N110
MOSFET N-CH 1100V 3A TO-263
- Manufacturer
- IXYS
- Datasheet
- Price
- 3.49
- Stock
- 0
Product Details
- Series
- TrenchMV™
- Power Dissipation (Max)
- 430W (Tc)
- FET Type
- N-Channel
- Supplier Device Package
- TO-3P
- Packaging
- Tube
- Gate Charge (Qg) (Max) @ Vgs
- 132nC @ 10V
- Vgs (Max)
- ±30V
- Drain to Source Voltage (Vdss)
- 100V
- Technology
- MOSFET (Metal Oxide)
- Input Capacitance (Ciss) (Max) @ Vds
- 6600pF @ 25V
- FET Feature
- -
- Current - Continuous Drain (Id) @ 25°C
- 160A (Tc)
- Part Status
- Active
- Drive Voltage (Max Rds On, Min Rds On)
- 10V
- Mounting Type
- Through Hole
- Package / Case
- TO-3P-3, SC-65-3
- Vgs(th) (Max) @ Id
- 4.5V @ 250µA
- Operating Temperature
- -55°C ~ 175°C (TJ)
- Rds On (Max) @ Id, Vgs
- 7mOhm @ 25A, 10V