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IXYS IXTA1R4N100P
MOSFET N-CH 1000V 1.4A TO-263
- Manufacturer
- IXYS
- Datasheet
- Price
- 2
- Stock
- 0
Product Details
- Operating Temperature
- -55°C ~ 150°C (TJ)
- Rds On (Max) @ Id, Vgs
- 500mOhm @ 500mA, 10V
- Series
- -
- Power Dissipation (Max)
- 150W (Tc)
- FET Type
- N-Channel
- Supplier Device Package
- TO-252
- Packaging
- Tube
- Gate Charge (Qg) (Max) @ Vgs
- 12nC @ 10V
- Vgs (Max)
- ±30V
- Drain to Source Voltage (Vdss)
- 700V
- Technology
- MOSFET (Metal Oxide)
- Input Capacitance (Ciss) (Max) @ Vds
- 800pF @ 10V
- FET Feature
- -
- Current - Continuous Drain (Id) @ 25°C
- 8A (Tc)
- Part Status
- Active
- Drive Voltage (Max Rds On, Min Rds On)
- 10V
- Mounting Type
- Surface Mount
- Package / Case
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Vgs(th) (Max) @ Id
- 5V @ 250µA