IXYS IXFY26N30X3

Product Details

Rds On (Max) @ Id, Vgs

45mOhm @ 18A, 10V

Series

HiPerFET™

Power Dissipation (Max)

176W (Tc)

FET Type

N-Channel

Supplier Device Package

TO-252AA

Packaging

Tube

Gate Charge (Qg) (Max) @ Vgs

21nC @ 10V

Vgs (Max)

±20V

Drain to Source Voltage (Vdss)

200V

Technology

MOSFET (Metal Oxide)

Input Capacitance (Ciss) (Max) @ Vds

1425pF @ 25V

FET Feature

-

Current - Continuous Drain (Id) @ 25°C

36A (Tc)

Part Status

Active

Drive Voltage (Max Rds On, Min Rds On)

10V

Mounting Type

Surface Mount

Package / Case

TO-252-3, DPak (2 Leads + Tab), SC-63

Vgs(th) (Max) @ Id

4.5V @ 500µA

Operating Temperature

-55°C ~ 150°C (TJ)