IXYS IXFX180N25T

Product Details

Vgs (Max)

±20V

Drain to Source Voltage (Vdss)

600V

Technology

MOSFET (Metal Oxide)

Input Capacitance (Ciss) (Max) @ Vds

6530pF @ 10V

FET Feature

-

Current - Continuous Drain (Id) @ 25°C

77.5A (Tc)

Part Status

Not For New Designs

Drive Voltage (Max Rds On, Min Rds On)

10V

Mounting Type

Through Hole

Package / Case

TO-247-3

Vgs(th) (Max) @ Id

3.5V @ 2.96mA

Operating Temperature

-55°C ~ 150°C (TJ)

Rds On (Max) @ Id, Vgs

41mOhm @ 44.4A, 10V

Series

CoolMOS™

Power Dissipation (Max)

481W (Tc)

FET Type

N-Channel

Supplier Device Package

PG-TO247-3

Packaging

Tube

Gate Charge (Qg) (Max) @ Vgs

290nC @ 10V