IXYS IXFV96N20P

Product Details

Series

HiPerFET™

Power Dissipation (Max)

560W (Tc)

FET Type

N-Channel

Supplier Device Package

PLUS247™-3

Packaging

Tube

Gate Charge (Qg) (Max) @ Vgs

267nC @ 10V

Vgs (Max)

±20V

Drain to Source Voltage (Vdss)

1000V

Technology

MOSFET (Metal Oxide)

Input Capacitance (Ciss) (Max) @ Vds

8700pF @ 25V

FET Feature

-

Current - Continuous Drain (Id) @ 25°C

24A (Tc)

Part Status

Obsolete

Drive Voltage (Max Rds On, Min Rds On)

10V

Mounting Type

Through Hole

Package / Case

TO-247-3

Vgs(th) (Max) @ Id

5.5V @ 8mA

Operating Temperature

-55°C ~ 150°C (TJ)

Rds On (Max) @ Id, Vgs

390mOhm @ 12A, 10V