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IXYS IXFT50N60P3

MOSFET N-CH 600V 50A TO268

Manufacturer
IXYS
Datasheet
Price
6.76
Stock
0

Product Details

Vgs (Max)
±30V
Drain to Source Voltage (Vdss)
650V
Technology
MOSFET (Metal Oxide)
Input Capacitance (Ciss) (Max) @ Vds
4100pF @ 300V
FET Feature
-
Current - Continuous Drain (Id) @ 25°C
35A (Ta)
Part Status
Active
Drive Voltage (Max Rds On, Min Rds On)
10V
Mounting Type
Through Hole
Package / Case
TO-247-3
Vgs(th) (Max) @ Id
4.5V @ 2.1mA
Operating Temperature
150°C (TJ)
Rds On (Max) @ Id, Vgs
95mOhm @ 17.5A, 10V
Series
DTMOSIV
Power Dissipation (Max)
270W (Tc)
FET Type
N-Channel
Supplier Device Package
TO-247
Packaging
Tube
Gate Charge (Qg) (Max) @ Vgs
115nC @ 10V