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IXYS IXFT4N100Q
MOSFET N-CH 1000V 4A TO-268
- Manufacturer
- IXYS
- Datasheet
- Price
- 6.15
- Stock
- 0
Product Details
- Part Status
- Active
- Drive Voltage (Max Rds On, Min Rds On)
- 10V
- Mounting Type
- Surface Mount
- Package / Case
- TO-268-3, D³Pak (2 Leads + Tab), TO-268AA
- Vgs(th) (Max) @ Id
- 5V @ 4mA
- Operating Temperature
- -55°C ~ 175°C (TJ)
- Rds On (Max) @ Id, Vgs
- 11mOhm @ 70A, 10V
- Series
- HiPerFET™, PolarHT™
- Power Dissipation (Max)
- 600W (Tc)
- FET Type
- N-Channel
- Supplier Device Package
- TO-268
- Packaging
- Tube
- Gate Charge (Qg) (Max) @ Vgs
- 155nC @ 10V
- Vgs (Max)
- ±20V
- Drain to Source Voltage (Vdss)
- 100V
- Technology
- MOSFET (Metal Oxide)
- Input Capacitance (Ciss) (Max) @ Vds
- 4700pF @ 25V
- FET Feature
- -
- Current - Continuous Drain (Id) @ 25°C
- 140A (Tc)