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IXYS IXFT12N90Q

MOSFET N-CH 900V 12A TO-268

Manufacturer
IXYS
Datasheet
Price
12.95
Stock
0

Product Details

Vgs (Max)
±20V
Drain to Source Voltage (Vdss)
100V
Technology
MOSFET (Metal Oxide)
Input Capacitance (Ciss) (Max) @ Vds
12600pF @ 25V
FET Feature
-
Current - Continuous Drain (Id) @ 25°C
170A (Tc)
Part Status
Active
Drive Voltage (Max Rds On, Min Rds On)
10V
Mounting Type
Through Hole
Package / Case
TO-247-3
Vgs(th) (Max) @ Id
4V @ 1mA
Operating Temperature
-55°C ~ 150°C (TJ)
Rds On (Max) @ Id, Vgs
12mOhm @ 500mA, 10V
Series
PolarP™
Power Dissipation (Max)
890W (Tc)
FET Type
P-Channel
Supplier Device Package
PLUS247™-3
Packaging
Tube
Gate Charge (Qg) (Max) @ Vgs
240nC @ 10V