IXYS IXFR140N30P

Product Details

Rds On (Max) @ Id, Vgs

1.6mOhm @ 100A, 10V

Series

GigaMOS™, TrenchT2™

Power Dissipation (Max)

830W (Tc)

FET Type

N-Channel

Supplier Device Package

24-SMPD

Packaging

Tube

Gate Charge (Qg) (Max) @ Vgs

545nC @ 10V

Vgs (Max)

±20V

Drain to Source Voltage (Vdss)

75V

Technology

MOSFET (Metal Oxide)

Input Capacitance (Ciss) (Max) @ Vds

41000pF @ 25V

FET Feature

-

Current - Continuous Drain (Id) @ 25°C

500A (Tc)

Part Status

Active

Drive Voltage (Max Rds On, Min Rds On)

10V

Mounting Type

Surface Mount

Package / Case

24-PowerSMD, 21 Leads

Vgs(th) (Max) @ Id

5V @ 8mA

Operating Temperature

-55°C ~ 175°C (TJ)