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IXYS IXFQ50N60X
MOSFET N-CH 600V 50A TO3P
- Manufacturer
- IXYS
- Datasheet
- Price
- 6.93
- Stock
- 0
Product Details
- Rds On (Max) @ Id, Vgs
- 7mOhm @ 50A, 10V
- Series
- TrenchMV™
- Power Dissipation (Max)
- 156W (Tc)
- FET Type
- N-Channel
- Supplier Device Package
- ISOPLUS i4-PAC™
- Packaging
- Tube
- Gate Charge (Qg) (Max) @ Vgs
- 152nC @ 10V
- Vgs (Max)
- ±30V
- Drain to Source Voltage (Vdss)
- 100V
- Technology
- MOSFET (Metal Oxide)
- Input Capacitance (Ciss) (Max) @ Vds
- 9400pF @ 25V
- FET Feature
- -
- Current - Continuous Drain (Id) @ 25°C
- 90A (Tc)
- Part Status
- Active
- Drive Voltage (Max Rds On, Min Rds On)
- 10V
- Mounting Type
- Through Hole
- Package / Case
- i4-Pac™-5
- Vgs(th) (Max) @ Id
- 4.5V @ 250µA
- Operating Temperature
- -55°C ~ 175°C (TJ)