IXYS IXFP8N65X2

Product Details

Rds On (Max) @ Id, Vgs

6.5mOhm @ 50A, 10V

Series

-

Power Dissipation (Max)

108W (Tc)

FET Type

P-Channel

Supplier Device Package

ATPAK

Packaging

Tape & Reel (TR)

Gate Charge (Qg) (Max) @ Vgs

250nC @ 10V

Vgs (Max)

±20V

Drain to Source Voltage (Vdss)

60V

Technology

MOSFET (Metal Oxide)

Input Capacitance (Ciss) (Max) @ Vds

13000pF @ 20V

FET Feature

-

Current - Continuous Drain (Id) @ 25°C

120A (Ta)

Part Status

Active

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Mounting Type

Surface Mount

Package / Case

TO-252-3, DPak (2 Leads + Tab), SC-63

Vgs(th) (Max) @ Id

2.6V @ 1mA

Operating Temperature

-55°C ~ 175°C (TJ)