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IXYS IXFP3N120
MOSFET N-CH 1200V 3A TO-220
- Manufacturer
- IXYS
- Datasheet
- Price
- 6.17
- Stock
- 33
Product Details
- Rds On (Max) @ Id, Vgs
- 65mOhm @ 12.5A, 10V
- Series
- DTMOSIV-H
- Power Dissipation (Max)
- 270W (Tc)
- FET Type
- N-Channel
- Supplier Device Package
- TO-247
- Packaging
- Tube
- Gate Charge (Qg) (Max) @ Vgs
- 85nC @ 10V
- Vgs (Max)
- ±30V
- Drain to Source Voltage (Vdss)
- 600V
- Technology
- MOSFET (Metal Oxide)
- Input Capacitance (Ciss) (Max) @ Vds
- 4100pF @ 300V
- FET Feature
- Super Junction
- Current - Continuous Drain (Id) @ 25°C
- 38.8A (Ta)
- Part Status
- Active
- Drive Voltage (Max Rds On, Min Rds On)
- 10V
- Mounting Type
- Through Hole
- Package / Case
- TO-247-3
- Vgs(th) (Max) @ Id
- 3.5V @ 1.9mA
- Operating Temperature
- 150°C (TJ)