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IXYS IXFN70N100X
MOSFET 1KV 65A ULTRA JCT SOT227
- Manufacturer
- IXYS
- Datasheet
- Price
- 48.41
- Stock
- 25
Product Details
- Package / Case
- Module
- Vgs(th) (Max) @ Id
- 4V @ 35.2mA
- Operating Temperature
- 175°C (TJ)
- Rds On (Max) @ Id, Vgs
- -
- Series
- -
- Power Dissipation (Max)
- 1360W (Tc)
- FET Type
- N-Channel
- Supplier Device Package
- Module
- Packaging
- Tray
- Drain to Source Voltage (Vdss)
- 1200V
- Vgs (Max)
- +22V, -6V
- Input Capacitance (Ciss) (Max) @ Vds
- 20000pF @ 10V
- Technology
- SiC (Silicon Carbide Junction Transistor)
- Current - Continuous Drain (Id) @ 25°C
- 204A (Tc)
- FET Feature
- -
- Drive Voltage (Max Rds On, Min Rds On)
- -
- Part Status
- Active
- Mounting Type
- Chassis Mount