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IXYS IXFN64N50PD2

MOSFET N-CH 500V 52A SOT-227B

Manufacturer
IXYS
Datasheet
Price
29.23
Stock
0

Product Details

Vgs (Max)
±30V
Drain to Source Voltage (Vdss)
600V
Technology
MOSFET (Metal Oxide)
Input Capacitance (Ciss) (Max) @ Vds
12000pF @ 25V
FET Feature
-
Current - Continuous Drain (Id) @ 25°C
37A (Tc)
Part Status
Active
Drive Voltage (Max Rds On, Min Rds On)
10V
Mounting Type
Through Hole
Package / Case
ISOPLUS264™
Vgs(th) (Max) @ Id
5.5V @ 8mA
Operating Temperature
-55°C ~ 150°C (TJ)
Rds On (Max) @ Id, Vgs
92mOhm @ 35A, 10V
Series
HiPerFET™
Power Dissipation (Max)
360W (Tc)
FET Type
N-Channel
Supplier Device Package
ISOPLUS264™
Packaging
Tube
Gate Charge (Qg) (Max) @ Vgs
265nC @ 10V