IXYS IXFN44N100P

Product Details

Packaging

Bulk

Gate Charge (Qg) (Max) @ Vgs

290nC @ 10V

Vgs (Max)

±30V

Drain to Source Voltage (Vdss)

1200V

Technology

MOSFET (Metal Oxide)

Input Capacitance (Ciss) (Max) @ Vds

6200pF @ 25V

FET Feature

-

Current - Continuous Drain (Id) @ 25°C

22A (Tc)

Part Status

Active

Drive Voltage (Max Rds On, Min Rds On)

10V

Mounting Type

Through Hole

Package / Case

TO-247-3

Vgs(th) (Max) @ Id

5V @ 2.5mA

Operating Temperature

-55°C ~ 150°C (TJ)

Rds On (Max) @ Id, Vgs

570mOhm @ 11A, 10V

Series

POWER MOS 7®

Power Dissipation (Max)

690W (Tc)

FET Type

N-Channel

Supplier Device Package

T-MAX™ [B2]