IXYS IXFN32N120P

Product Details

Operating Temperature

-55°C ~ 150°C (TJ)

Rds On (Max) @ Id, Vgs

40Ohm @ 50mA, 10V

Series

-

Power Dissipation (Max)

190W (Tc)

FET Type

N-Channel

Supplier Device Package

ISOPLUS i4-PAC™

Packaging

Tube

Gate Charge (Qg) (Max) @ Vgs

88nC @ 10V

Vgs (Max)

±20V

Drain to Source Voltage (Vdss)

4500V

Technology

MOSFET (Metal Oxide)

Input Capacitance (Ciss) (Max) @ Vds

3300pF @ 25V

FET Feature

-

Current - Continuous Drain (Id) @ 25°C

1.4A (Tc)

Part Status

Active

Drive Voltage (Max Rds On, Min Rds On)

10V

Mounting Type

Through Hole

Package / Case

i4-Pac™-5 (3 Leads)

Vgs(th) (Max) @ Id

6V @ 250µA