Images are for reference only. See Product Specifications for product details
IXYS IXFN170N65X2
MOSFET N-CH
- Manufacturer
- IXYS
- Datasheet
- Price
- 36.59
- Stock
- 6
Product Details
- Packaging
- Tube
- Gate Charge (Qg) (Max) @ Vgs
- 340nC @ 10V
- Vgs (Max)
- ±30V
- Drain to Source Voltage (Vdss)
- 850V
- Technology
- MOSFET (Metal Oxide)
- Input Capacitance (Ciss) (Max) @ Vds
- 13300pF @ 25V
- FET Feature
- -
- Current - Continuous Drain (Id) @ 25°C
- 90A (Tc)
- Part Status
- Active
- Drive Voltage (Max Rds On, Min Rds On)
- 10V
- Mounting Type
- Chassis Mount
- Package / Case
- SOT-227-4, miniBLOC
- Vgs(th) (Max) @ Id
- 5.5V @ 8mA
- Operating Temperature
- -55°C ~ 150°C (TJ)
- Rds On (Max) @ Id, Vgs
- 41mOhm @ 500mA, 10V
- Series
- HiPerFET™
- Power Dissipation (Max)
- 1200W (Tc)
- FET Type
- N-Channel
- Supplier Device Package
- SOT-227B