IXYS IXFL32N120P

Product Details

Series

HiPerFET™

Power Dissipation (Max)

694W (Tc)

FET Type

N-Channel

Supplier Device Package

24-SMPD

Packaging

Tube

Gate Charge (Qg) (Max) @ Vgs

264nC @ 10V

Vgs (Max)

±30V

Drain to Source Voltage (Vdss)

1000V

Technology

MOSFET (Metal Oxide)

Input Capacitance (Ciss) (Max) @ Vds

13600pF @ 25V

FET Feature

-

Current - Continuous Drain (Id) @ 25°C

30A (Tc)

Part Status

Active

Drive Voltage (Max Rds On, Min Rds On)

10V

Mounting Type

Surface Mount

Package / Case

24-PowerSMD, 21 Leads

Vgs(th) (Max) @ Id

6.5V @ 8mA

Operating Temperature

-55°C ~ 150°C (TJ)

Rds On (Max) @ Id, Vgs

245mOhm @ 22A, 10V