IXYS IXFK32N100Q3

Product Details

FET Feature

-

Current - Continuous Drain (Id) @ 25°C

29A (Tc)

Part Status

Active

Drive Voltage (Max Rds On, Min Rds On)

10V

Mounting Type

Through Hole

Package / Case

TO-247-3 Variant

Vgs(th) (Max) @ Id

5V @ 2.5mA

Operating Temperature

-55°C ~ 150°C (TJ)

Rds On (Max) @ Id, Vgs

560mOhm @ 14A, 10V

Series

POWER MOS 8™

Power Dissipation (Max)

1135W (Tc)

FET Type

N-Channel

Supplier Device Package

T-MAX™ [B2]

Packaging

Tube

Gate Charge (Qg) (Max) @ Vgs

300nC @ 10V

Vgs (Max)

±30V

Drain to Source Voltage (Vdss)

1200V

Technology

MOSFET (Metal Oxide)

Input Capacitance (Ciss) (Max) @ Vds

9670pF @ 25V