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IXYS IXFK230N20T

MOSFET N-CH 200V 230A TO-264

Manufacturer
IXYS
Datasheet
Price
18.4
Stock
229

Product Details

Vgs (Max)
±20V
Drain to Source Voltage (Vdss)
650V
Technology
GaNFET (Gallium Nitride)
Input Capacitance (Ciss) (Max) @ Vds
1500pF @ 400V
FET Feature
-
Current - Continuous Drain (Id) @ 25°C
46.5A (Tc)
Part Status
Active
Drive Voltage (Max Rds On, Min Rds On)
12V
Mounting Type
Through Hole
Package / Case
TO-247-3
Vgs(th) (Max) @ Id
4.8V @ 1mA
Operating Temperature
-55°C ~ 150°C (TJ)
Rds On (Max) @ Id, Vgs
41mOhm @ 30A, 10V
Series
-
Power Dissipation (Max)
156W (Tc)
FET Type
N-Channel
Supplier Device Package
TO-247-3
Packaging
Tube
Gate Charge (Qg) (Max) @ Vgs
36nC @ 10V