IXYS IXFH50N85X

Product Details

Rds On (Max) @ Id, Vgs

25mOhm @ 33.5A, 10V

Series

MegaMOS™

Power Dissipation (Max)

300W (Tc)

FET Type

N-Channel

Supplier Device Package

TO-247 (IXTH)

Packaging

Tube

Gate Charge (Qg) (Max) @ Vgs

260nC @ 10V

Vgs (Max)

±20V

Drain to Source Voltage (Vdss)

100V

Technology

MOSFET (Metal Oxide)

Input Capacitance (Ciss) (Max) @ Vds

4500pF @ 25V

FET Feature

-

Current - Continuous Drain (Id) @ 25°C

67A (Tc)

Part Status

Active

Drive Voltage (Max Rds On, Min Rds On)

10V

Mounting Type

Through Hole

Package / Case

TO-247-3

Vgs(th) (Max) @ Id

4V @ 4mA

Operating Temperature

-55°C ~ 150°C (TJ)