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IXYS IXFH32N100X
MOSFET 1KV 32A ULTRA JCT TO-247
- Manufacturer
- IXYS
- Datasheet
- Price
- 16.35
- Stock
- 30
Product Details
- Power Dissipation (Max)
- 890W (Tc)
- Series
- HiPerFET™
- Supplier Device Package
- TO-264
- FET Type
- N-Channel
- Gate Charge (Qg) (Max) @ Vgs
- 130nC @ 10V
- Vgs (Max)
- ±30V
- Drain to Source Voltage (Vdss)
- 1000V
- Technology
- MOSFET (Metal Oxide)
- Input Capacitance (Ciss) (Max) @ Vds
- 4075pF @ 25V
- FET Feature
- -
- Current - Continuous Drain (Id) @ 25°C
- 32A (Tc)
- Part Status
- Active
- Drive Voltage (Max Rds On, Min Rds On)
- 10V
- Mounting Type
- Through Hole
- Package / Case
- TO-264-3, TO-264AA
- Vgs(th) (Max) @ Id
- 6V @ 4mA
- Operating Temperature
- -55°C ~ 150°C (TJ)
- Rds On (Max) @ Id, Vgs
- 220mOhm @ 16A, 10V